advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 75v simple drive requirement r ds(on) 11m fast switching characteristic i d 90a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v 4 a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as mj t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 0.5 /w rthj-a maximum thermal resistance, junction-ambient 40 /w data & specifications subject to change without notice -55 to 150 250 linear derating factor single pulse avalanche energy 3 storage temperature range 90 70 360 -55 to 150 parameter rating 75 + 20 1 200902232 AP75N07GW rohs-compliant product 2 450 parameter g d s advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-3p package is widely preferred for commercial-industrial surface mount applications and suited for higher voltage applications such as smps. g d s to-3p
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 75 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.08 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 11 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =15v, i d =40a - 120 - s i dss drain-source leakage current v ds =75v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =60v , v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =40a - 83 130 nc q gs gate-source charge v ds =60v - 10 - nc q gd gate-drain ("miller") charge v gs =4.5v - 51 - nc t d(on) turn-on delay time 2 v dd =40v - 15 - ns t r rise time i d =30a - 73 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 340 - ns t f fall time r d =1.33 - 200 - ns c iss input capacitance v gs =0v - 4270 6830 pf c oss output capacitance v ds =25v - 690 - pf c rss reverse transfer capacitance f=1.0mhz - 320 - pf r g gate resistance f=1.0mhz - 1.8 2.7 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 t j =25 , i s =40a, v gs =0v - - 1.5 v t rr reverse recovery time i s =40a, v gs =0v - 90 - ns q rr reverse recovery charge di/dt=100a/s - 235 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =30a. 4.package limitation current is 90a . this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP75N07GW
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. on-resistance vs. reverse diode drain current 3 AP75N07GW 0 40 80 120 160 200 240 280 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =3.0v 10v 7.0 v 5.0v 4.5v 0 40 80 120 160 200 240 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c v g =3.0v 10v 7.0 v 5.0v 4.5v 8 12 16 20 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 9 10 11 12 13 0 20406080 i d , drain current (a) r ds(on) (m ? ) v gs =4.5v v gs =10v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP75N07GW q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0 40 80 120 160 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =25 o c v ds =5v 0 2 4 6 8 10 12 14 0 40 80 120 160 200 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =40v v ds =48v v ds =60v i d =40a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 duty=0.5 single pulse 0. 2 t j =150 o c
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